Streaming and removal forces due to second-order sound field during megasonic cleaning of silicon wafers
نویسندگان
چکیده
We calculate the second-order streaming force in a fluid in the vicinity of the solid/fluid interface for two systems of importance in the technology of megasonic cleaning of silicon wafers. The first system consists of a single planar interface between a solid elastic medium representing silicon and a viscous fluid, namely water. The second system accounts for the finite thickness of silicon wafers. It is composed of one silicon slab ~wafer! immersed in water. The components of the streaming force parallel and normal to the silicon/water interface are determined as functions of frequency and wave vector of the incident acoustic wave. The normal component of the streaming force is used to calculate the removal force defined as the net force perpendicular to the solid/fluid interface acting on a spherical contaminant particle adhering to the silicon surface. The removal force is too small to remove submicron particles. In contrast the streaming force parallel to the solid/fluid interface may remove particles by pushing or rolling them. The streaming force is shown to be very sensitive to the angle the incident acoustic wave makes with the silicon/water interface. © 2000 American Institute of Physics. @S0021-8979~00!05324-X#
منابع مشابه
Second-order sound field during megasonic cleaning of patterned silicon wafers: Application to ridges and trenches
We report calculations of first-order pressure and second-order pressure gradient fields in the neighborhood of patterned silicon wafers. The patterned wafers consist of a single ridge and two parallel ridges separated by a trench on a planar substrate. The efficacy of megasonic waves for cleaning patterned wafers contaminated with micron to submicron silica particles is discussed by comparing ...
متن کاملMegasonic cleaning of wafers in electrolyte solutions: Possible role of electro-acoustic and cavitation effects
Investigations have been conducted on the feasibility of removal of particles from silicon wafers in electrolyte solutions of different ionic strengths irradiated with megasonic waves. Cleaning experiments have been performed using potassium chloride (KCl) as a model electrolyte and silica particles as model contaminant particles. Particle removal efficiency (PRE) increases with KCl concentrati...
متن کاملUltrasonic and Megasonic Particle Removal
Particulate surface contamination is one of the major causes of low yields in the semiconductor and other affected industries. The theory of low frequency (ultrasonic) and high frequency (megasonic) cleaning will be presented. Ultrasonic cleaning (less than 100 kHz) is relevant to cleaning of optics and precision parts. Megasonic cleaning (0.8 to 1.2 MHz) is used in semiconductor manufacturing....
متن کاملA novel way of detecting transient cavitation near a solid surface during megasonic cleaning using electrochemical impedance spectroscopy
Megasonic energy assisted wet cleaning is traditionally used for removal of particulate contaminants from wafer and mask surfaces in semiconductor industry. One of the major issues associated with megasonic cleaning is the damage caused to fragile features due to transient cavitation. Development of a method to monitor transient cavitation events in solutions irradiated with sound energy will a...
متن کاملInvestigation of Ionic Contamination Removal from Silicon Dioxide Surfaces
T he removal of ionic contaminants from silicon surfaces surface contamination level can be reduced by more than one order of magnitude through the use of (wafers) during wet cleaning by pulsating flow is pulsating flow within a short cleaning time. SE/S228 investigated using numerical physical modelling and verified experimentally. T wo KCl removal processes, Dr L in is with IBM Microelectroni...
متن کامل